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| FDC637BNZ N-Channel 2.5V Specified PowerTrench(R) MOSFET September 2007 FDC637BNZ 20V, 6.2A, 24m Features Max rDS(on) = 24m at VGS = 4.5V, ID = 6.2A Max rDS(on) = 32m at VGS = 2.5V, ID = 5.2A Fast switching speed Low gate charge (8nC typical) High performance trench technology for extremely low rDS(on) SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick) HBM ESD protection level > 2kV typical (Note 3) Manufactured using green packaging material Halide-Free RoHS Compliant N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench(R) process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages. (R) tm Applications DC - DC Conversion Load switch Battery Protection S D D D 1 6 D G D Pin 1 D D G 2 3 5 D S 4 SuperSOTTM -6 MOSFET Maximum Ratings TA= 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25C TA = 25C (Note 1a) (Note 1b) TA = 25C (Note 1a) Ratings 20 12 6.2 20 1.6 0.8 -55 to +150 Units V V A W C Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 78 156 C/W Package Marking and Ordering Information Device Marking .637Z Device FDC637BNZ Package SSOT6 1 Reel Size 7'' Tape Width 8mm Quantity 3000 units www.fairchildsemi.com (c)2007 Fairchild Semiconductor Corporation FDC637BNZ Rev.C FDC637BNZ N-Channel 2.5V Specified PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 16V, VGS = 0V VGS = 12V, VDS = 0V 20 10 1 10 V mV/C A A On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 4.5V, ID = 6.2A VGS = 2.5V, ID = 5.2A VGS = 4.5V, ID = 6.2A, TJ = 125C VDD = 5V, ID = 6.2A 0.6 0.8 -3 21 26 30 27 24 32 41 S m 1.5 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 10V, VGS = 0V, f = 1MHz f = 1MHz 670 160 115 2.1 895 215 175 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 4.5V, VDD = 10V, ID = 6.2A VDD = 10V, ID = 6.2A VGS = 4.5V, RGEN = 6 8 6 22 6 8 1.3 2.2 16 12 36 12 12 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage VGS = 0V, IS = 1.3A Reverse Recovery Time Reverse Recovery Charge IF = 6.2A, di/dt = 100A/s (Note 2) 0.7 15 5 1.3 1.2 27 10 A V ns nC Notes: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. a. 78C/W when mounted on a 1 in2 pad of 2 oz copper. b. 156C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. (c)2007 Fairchild Semiconductor Corporation FDC637BNZ Rev.C 2 www.fairchildsemi.com FDC637BNZ N-Channel 2.5V Specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 20 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4.0 VGS = 4.5V VGS = 2.5V VGS = 2V 16 ID, DRAIN CURRENT (A) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 VGS = 1.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 12 8 4 0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 1.8V VGS = 2V VGS = 2.5V VGS = 1.8V VGS = 1.5V VGS = 4.5V 0 1 2 3 4 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 150 ID = 6.2A SOURCE ON-RESISTANCE (m) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 0.6 -75 ID = 6.2A VGS = 4.5V 120 90 60 30 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX rDS(on), DRAIN TO TJ = 125oC TJ = 25oC -50 -25 0 25 50 75 100 125 150 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 20 16 ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 20 10 VGS = 0V VDS = 5V 1 TJ = 150oC TJ = 25oC 12 8 4 0 0.0 150oC 0.1 TJ = TJ = 25oC 0.01 TJ = -55oC TJ = -55oC 0.5 1.0 1.5 2.0 2.5 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2007 Fairchild Semiconductor Corporation FDC637BNZ Rev.C 3 www.fairchildsemi.com FDC637BNZ N-Channel 2.5V Specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 4.5 VGS, GATE TO SOURCE VOLTAGE(V) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 ID = 6.2A VDD = 5V CAPACITANCE (pF) 2000 1000 Ciss VDD = 10V VDD = 15V Coss 100 50 0.1 Crss f = 1MHz VGS = 0V 1.5 3.0 4.5 6.0 7.5 9.0 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 20 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 30 10 Ig, GATE LEAKAGE CURRENT(uA) 5 4 3 2 1 0 10 10 10 10 10 10 10 10 VDS = 0V ID, DRAIN CURRENT (A) 10 100us TJ = 150oC 1 THIS AREA IS LIMITED BY rDS(on) 1ms 10ms 100ms 1s 10s DC -1 -2 -3 TJ = 25oC 0.1 SINGLE PULSE TJ = MAX RATED RJA = 156oC/W TA = 25oC 0 3 6 9 12 15 18 0.01 0.1 1 10 50 VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Gate Leakage Current vs Gate to Source Voltage 1000 VGS = 4.5V P(PK), PEAK TRANSIENT POWER (W) Figure 10. Forward Bias Safe Operating Area SINGLE PULSE RJA = 156oC/W TA = 25oC 100 10 1 0.5 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation (c)2007 Fairchild Semiconductor Corporation FDC637BNZ Rev.C 4 www.fairchildsemi.com FDC637BNZ N-Channel 2.5V Specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE RJA = 156 C/W o t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 1E-3 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve (c)2007 Fairchild Semiconductor Corporation FDC637BNZ Rev.C 5 www.fairchildsemi.com FDC637BNZ N-Channel 2.5V Specified PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. tm Rev. I31 This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. www.fairchildsemi.com Obsolete Not In Production (c)2007 Fairchild Semiconductor Corporation FDC637BNZ Rev.C |
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